1/5 preliminary data august 2002 this is preliminary information on a new product now in development or undergoing evaluation. details are subject to change wit hout notice. STW14NM50 n-channel 500v - 0.32 w - 14a to-247 mdmesh?power mosfet n typical r ds (on) = 0.32 w n high dv/dt and avalanche capabilities n 100% avalanche tested n low input capacitance and gate charge n low gate input resistance n tight process control and high manufactoring yields description the mdmesh ? is a new revolutionary mosfet technology that associates the multiple drain pro- cess with the companys powermesh? horizontal layout. the resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. the adoption of the companys proprierati strip technique yields overall dynamic performance that is significantly better than that of similar completitions products. applications the mdmesh? family is very suitablr for increase the power density of high voltage converters allow- ing system miniaturization and higher efficiencies. absolute maximum ratings (?)pulse width limited by safe operating area (*)limited only by maximum temperature allowed type v dss r ds(on) i d STW14NM50 500v < 0.35 w 14 a symbol parameter value unit v ds drain-source voltage (v gs = 0) 500 v v dgr drain-gate voltage (r gs = 20 k w ) 500 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25c 14 a i d drain current (continuous) at t c = 100c 8.8 a i dm (1) drain current (pulsed) 56 a p tot total dissipation at t c = 25c 175 w derating factor 1.28 w/c dv/dt peak diode recovery voltage slope 6 v/ns t stg storage temperature C65 to 150 c t j max. operating junction temperature 150 c (1)i sd 12a, di/dt 100a/s, v dd v (br)dss , t j t jmax. to-247 1 2 3 internal schematic diagram
STW14NM50 2/5 thermal data avalanche characteristics electrical characteristics (t case = 25 c unless otherwise specified) off on (1) dynamic 1. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss . rthj-case thermal resistance junction-case max 0.715 c/w rthj-amb thermal resistance junction-ambient max 30 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 12 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 400 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 500 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating 1a v ds = max rating, t c = 125 c 10 a i gss gate-body leakage current (v ds = 0) v gs = 30v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs , i d = 250a 345v r ds(on) static drain-source on resistance v gs = 10v, i d = 6a 0.3 0.35 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds > i d(on) x r ds(on)max, i d =6a 5.2 s c iss input capacitance v ds = 25v, f = 1 mhz, v gs = 0 1000 pf c oss output capacitance 180 pf c rss reverse transfer capacitance 25 pf c oss eq. (1) equivalent output capacitance v gs = 0v, v ds = 0v to 400v 90 pf r g gate input resistance f=1 mhz gate dc bias = 0 test signal level = 20mv open drain 1.6 w
3/5 STW14NM50 electrical characteristics (continued) switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time rise time v dd = 250 v, i d = 6 a r g = 4.7 w v gs = 10 v (see test circuit, figure 3) 20 ns t r 10 ns q g total gate charge v dd = 400 v, i d = 12 a, v gs = 10 v 28 nc q gs gate-source charge 8 nc q gd gate-drain charge 15 nc symbol parameter test conditions min. typ. max. unit t r(voff) off-voltage rise time v dd = 400 v, i d = 12 a, r g =4.7 w, v gs = 10 v (see test circuit, figure 5) 19 ns t f fall time 8 ns t c cross-over time 18 ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 12 a i sdm (1) source-drain current (pulsed) 48 a v sd (2) forward on voltage i sd = 12 a, v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 12 a, di/dt = 100 a/s, v dd = 100 v, t j = 25c (see test circuit, figure 5) 270 2.23 16.5 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 12 a, di/dt = 100 a/s, v dd = 100 v, t j = 150c (see test circuit, figure 5) 340 3 18 ns c a
4/5 STW14NM50 dim. mm inch min. typ. max. min. typ. max. a 4.7 5.3 0.185 0.209 d 2.2 2.6 0.087 0.102 e 0.4 0.8 0.016 0.031 f 1 1.4 0.039 0.055 f3 2 2.4 0.079 0.094 f4 3 3.4 0.118 0.134 g 10.9 0.429 h 15.3 15.9 0.602 0.626 l 19.7 20.3 0.776 0.779 l3 14.2 14.8 0.559 0.582 l4 34.6 1.362 l5 5.5 0.217 m 2 3 0.079 0.118 p025p to-247 mechanical data
5/5 STW14NM50 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no res ponsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devi ces or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2002 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco singapore - spain - sweden - switzerland - united kingdom - united states. ? http://www.st.com
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